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Power Transistors
2SC2590
Silicon NPN epitaxial planar type
For low-frequency power amplification
8.0+0.5 -0.1
Unit: mm
3.20.2
1.90.1
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 120 5 0.5 1.0 1.2 150 -55 to +150 Unit V V V A A W C C
1 2 3 0.750.1 4.60.2 0.50.1 0.50.1 2.30.2 1.760.1
Electrical Characteristics Ta = 25C 3C
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio *1 Symbol VCEO VEBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob Conditions IC = 100 A, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 150 mA VCE = 5 V, IC = 500 mA IC = 300 mA, IB = 30 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 200 11 20 Min 120 5 90 65 100 1.0 1.2 V V MHz pF 220 Typ Max Unit V V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 Q 90 to 155 R 130 to 220
16.01.0
* Excellent collector current IC characteristics of forward current transfer ratio hFE * High transition frequency fT * TO-126B package which requires no insulation plate for installation to the heat sink
3.80.3
11.00.5
Features
3.160.1
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
3.050.1
Publication date: January 2003
SJD00100BED
1
2SC2590
PC Ta
6
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
280
TC=25C
IC/IB=10
VCE(sat) IC
Collector power dissipation PC (W)
5
(1)With a 100x100x2mm Al heat sink (2)Without heat sink
160
Collector current IC (mA)
IB=1.0mA 0.9mA
1
4
120
0.8mA 0.7mA 0.6mA
3
25C
(1)
80
0.5mA 0.4mA 0.3mA
0.1
TC=100C
-25C
2
1
40
(2)
0.2mA 0.1mA
0
0
0 40 80 120 160 200
0
2
4
6
8
10
12
0.01 0.01
0.1
1
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
IC/IB=10
hFE IC
400
VCE=10V
fT I E
VCB=10V f=200MHz TC=25C
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
1
TC=-25C 100C 25C
1 000
Transition frequency fT (MHz)
300
TC=100C 25C
200
0.1
100
-25C
100
0.01 0.01
0.1
1
10 0.01
0.1
1
0 -1
-10
-100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
80
IE=0 f=1MHz TC=25C
Safe operation area
10
Single pulse TC=25C
Collector current IC (A)
60
1
ICP IC t=1s t=10ms
40
0.1
20
0.01
0
0.001
1 10 100
1
10
100
1 000
Collector-base voltage VCB (V)
Collector-emitter voltage VCE (V)
2
SJD00100BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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